An Introduction to Signal Detection and Estimation (Springer by H. Vincent Poor

By H. Vincent Poor

Crucial historical past studying for engineers and scientists operating in such fields as communications, keep watch over, sign, and snapshot processing, radar and sonar, radio astronomy, seismology, distant sensing, and instrumentation. The e-book can be utilized as a textbook for a unmarried direction, in addition to a mixture of an introductory and a sophisticated direction, or maybe for 2 separate classes, one in sign detection, the opposite in estimation.

Show description

Read Online or Download An Introduction to Signal Detection and Estimation (Springer Texts in Electrical Engineering) PDF

Best electrical & electronic engineering books

Parallel Algorithms for Vlsi Computer-Aided Design

Parallel computing is changing into an more and more low cost and cheap capability for supplying huge, immense computing strength, and vastly parallel (MPP) machines were really effortless to construct. even though, designing sturdy parallel algorithms that may successfully use the assets to get the utmost functionality is still a problem.

Electrical Machines, Drives and Power Systems, Fifth Edition

For one-semester, undergraduate-level classes in Motor Controls, electrical Machines, energy Electronics, and electrical strength. This best-selling textual content employs a theoretical, sensible, multidisciplinary method of supply introductory scholars with a extensive realizing of recent electrical energy. The scope of the e-book displays the speedy adjustments that experience happened in strength expertise during the last few years--allowing the doorway of strength electronics into each aspect of commercial drives, and increasing the sector to open extra occupation possibilities.

Introduction to Robotics: Mechanics and Control (2nd Edition)

The second one variation of this hugely profitable ebook introduces the technological know-how and engineering of mechanical manipulation and gives an entire evaluate of the elemental abilities underlying the mechanics and keep an eye on of manipulators. This variation positive factors new fabric on Controls, Computer-Aided layout and production, and Off-Line Programming structures.

Wavelets : theory, algorithms, and applications

Wavelets: idea, Algorithms, and purposes is the 5th quantity within the hugely revered sequence, WAVELET research AND ITS functions. This quantity indicates why wavelet research has turn into a device of selection infields starting from picture compression, to sign detection and research in electric engineering and geophysics, to research of turbulent or intermittent approaches.

Additional resources for An Introduction to Signal Detection and Estimation (Springer Texts in Electrical Engineering)

Example text

25 GHz low DC power low-noise amplifier in SiGe IEEE CICC Proc. pp 177–80 [87] Henderson G N, O’Keefe M F, Boles T E, Noonan P, Sledziewski J M and Brown B M 1997 SiGe bipolar junction transistors for microwave power applications IEEE MTT-S Dig. pp 1299–1302 [88] Long J R, Copeland M A, Kovacic S J, Malhi D S and Harame D L 1996 RF analogue and digital circuits in SiGe technology IEEE ISSCC Tech. Dig. pp 82–3 [89] Larson L, Case M, Rosenbaum S, Rensch D, Macdonald P, Matloubian M, Chen M, Harame D, Malinowski J, Meyerson B, Gilbert M and Maas S 1996 Si/SiGe HBT technology for low-cost monolithic microwave integrated circuits IEEE ISSCC Tech.

Pp 557–60 [46] Oda K, Ohue E, Tanabe M, Shimamoto H and Washio K 1999 DC and AC performances in selectively grown SiGe-base HBTs IEICE Trans. Electron. E82-C 2013–20 [47] Meister T F, Schafer H, Franosch M, Molzer W, Aufinger K, Scheler U, Walz C, Stolz M, Boguth S and Bock J 1995 SiGe-base bipolar technology with 74 GHz fmax and 11 ps gate delay IEEE IEDM Tech. Dig. pp 739–42 [48] Zerounian N, Aniel F, Adde R and Gruhle A 2000 SiGe heterojunction bipolar transistor with 213 GHz fT at 77 K Electron.

Vertical MOS heterostructures are expected to solve the scaling issues of lithography, doping confinement and DIBL. Vertical devices will have Vertical heterostructure FETs 19 small contact areas and will facilitate interconnects and minimize the via contacts leading to a minimization of the area per function. 3 V at VDD of 1 V and an intrinsic carrier transit time of less than 1 ps. In establishing its potential advantages and assessing its performance with respect to conventional transistors, a technology which provides denser and faster structures, and uses the standard processing technology and production equipment, research has been initiated.

Download PDF sample

Rated 4.15 of 5 – based on 23 votes