By Kenneth L. Ashley
E-book by way of Ashley, Kenneth L.
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Mcd, a solution is obtained to provide a comparison with the measured VGS versus ID for the circuit. 5 < |VSS| < 10 V. 4. Derivation of the Linear-Region Current – Voltage Relation The voltage along the channel is defined as Vc(x) (Fig. 5), with the range 0 at x = 0 (source) to Vc(L) = VD (drain). The device is in the linear-region mode, that is, VD < Veffn. 2). 5. Diagrammatic NMOS transistor biased into the linear region. 22 where Rchan(x) = 1/Gchan(x). 5. Summary of Equations Equations for NMOS.
In real transistors, the collector (BJT) or drain (MOSFET) current increases with increasing VCE or VDS. This is accounted for by including an output resistance, rout, in the linear model, as added to the circuit in Fig. 5. 5. Basic linear circuit with transistor linear model. Circuit includes signal source voltage and load RL, Transistor model now includes output resistance rout. where VA is the characterizing transistor parameter. 2); these equations are consistent with the simplified circuit model of Fig.
1. The device consists of a three-layer structure of metal–oxide–semiconductor (MOS). A two-terminal MOS structure (connections to metal and semiconductor) is essentially a parallel-plate capacitor. , with respect to the metal contact on the underside of the p-type semiconductor body (or substrate)], negative charges are induced under the oxide layer in the semiconductor. When VG (with respect to the semiconductor body) exceeds the threshold voltage, Vtno, a channel of free-carrier electrons forms under the oxide; that is, the onset of the channel occurs when VG = Vtno.